Spectral response of photocurrents in the MOST and the dependence on gate and substrate bias
- H.C. Card
- F. Fang
- 2008
- Journal of Applied Physics
Paper
Publications
67 results for F. Fang
Stress-relieved regrowth of silicon on sapphire by laser annealing
- G.A. Sai-Halasz
- F. Fang
- et al.
- 2008
- Applied Physics Letters
PaperEffect of surface scattering on electron mobility in an inversion layer on p-type silicon
- F. Fang
- S. Triebwasser
- 2004
- Applied Physics Letters
PaperEffects of low-energy electron irradiation on Si-insulated gate fets
- A.J. Speth
- F. Fang
- 2004
- Applied Physics Letters
PaperEffect of crystal orientation on Ge-GaAs heterojunctions
- F. Fang
- W.E. Howard
- 2004
- Journal of Applied Physics
PaperHot electron effects and saturation velocities in silicon inversion layers
- F. Fang
- A.B. Fowler
- 2003
- Journal of Applied Physics
PaperAnnealing properties of ion-implanted p-n junctions in silicon
- Alwin E. Michel
- F. Fang
- et al.
- 2003
- Journal of Applied Physics
PaperLateral spread of ion-implanted impurities in silicon
- E. Pan
- F. Fang
- 2003
- Journal of Applied Physics
PaperA low-temperature insulating phase at v = 1.5 for 2D holes in high-mobility Si-Si1-xGex heterostructures with Landau level degeneracy
- R.B. Dunford
- E.E. Mitchell
- et al.
- 1999
- Journal of Physics Condensed Matter
PaperEffect of illumination on transport properties of the high mobility 2D hole gas in Si-SiGe heterostructures
- V.A. Stadnik
- E.E. Mitchell
- et al.
- 1998
- Physica B: Condensed Matter
Paper