PaperVariation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layersA. Hartstein, F. FangPhysical Review B
PaperQuantized magnetoresistance in two-dimensional electron systemsF. Fang, P.J. StilesPhysical Review B
PaperElectrical and physical properties of high-Ge-content Si/SiGe p-type quantum wellsR.A. Kiehl, P.E. Batson, et al.Physical Review B
PaperTwo-subband transport: A conundrum in scatteringT.P. Smith III, F. Fang, et al.Physical Review B