Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings
- F. Lanzerath
- D. Buca
- et al.
- 2008
- Journal of Applied Physics
Paper
Publications
55 results for J. Knoch
Variability in SOI Schottky barrier MOSFETs
- S.F. Feste
- M. Zhang
- et al.
- 2008
- ULIS 2008
Conference paperSilicon nanowire tunneling field-effect transistors
- M.T. Björk
- J. Knoch
- et al.
- 2008
- Applied Physics Letters
PaperTunneling phenomena in carbon nanotube field-effect transistors
- Joachim Knoch
- Joerg Appenzeller
- 2008
- Physica Status Solidi (A) Applications and Materials Science
PaperOutperforming the conventional scaling rules in the quantum-capacitance limit
- J. Knoch
- W. Riess
- et al.
- 2008
- IEEE Electron Device Letters
PaperMany-body approach to the terahertz response of Wigner molecules in gated nanowire structures
- K.M. Indlekofer
- R. Németh
- et al.
- 2008
- Physical Review B - CMMP
PaperThreshold voltage variation in SOI Schottky-barrier MOSFETs
- Min Zhang
- Joachim Knoch
- et al.
- 2008
- IEEE Transactions on Electron Devices
PaperPatterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane
- H. Schmid
- M.T. Björk
- et al.
- 2008
- Journal of Applied Physics
PaperImpact ionization FETs based on silicon nanowires
- M.T. Björk
- O. Hayden
- et al.
- 2007
- DRC 2007
Conference paperTHz probe for nanowire FETs: Simulation of few-electron fingerprints
- Klaus Michael Indlekofer
- Radoslav Németh
- et al.
- 2007
- DRC 2007
Conference paper