J. Knoch, B. Lengeler, et al.
IEEE Transactions on Electron Devices
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
J. Knoch, B. Lengeler, et al.
IEEE Transactions on Electron Devices
J. Appenzeller, D.J. Frank
Applied Physics Letters
J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
M. Meier, S. Karg, et al.
Journal of Applied Physics