S. Karg, M. Meier, et al.
Journal of Applied Physics
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
S. Karg, M. Meier, et al.
Journal of Applied Physics
J. Appenzeller, Y.-M. Lin, et al.
Physical Review Letters
J. Knoch, J. Appenzeller
Applied Physics Letters
J. Appenzeller, J. Knoch, et al.
Physical Review Letters