Conference paper
Variability in SOI Schottky barrier MOSFETs
S.F. Feste, M. Zhang, et al.
ULIS 2008
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
S.F. Feste, M. Zhang, et al.
ULIS 2008
J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
K. Moselund, H. Ghoneim, et al.
DRC 2009
Dinkar V. Singh, Keith A. Jenkins, et al.
IEEE TNANO