J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
K. Moselund, H. Ghoneim, et al.
ESSDERC 2009
J. Knoch, S. Mantl, et al.
Solid-State Electronics
J. Knoch, M. Zhang, et al.
Microelectronic Engineering