VLS-grown silicon nanowires - Dopant deactivation and tunnel FETs
- Mikael T. Björk
- K. Moselund
- et al.
- 2010
- SNW 2010
Conference paper
Publications
55 results for J. Knoch
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- Applied Physics Letters
PaperImpact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
- C. Sandow
- J. Knoch
- et al.
- 2009
- Solid-State Electronics
PaperInterface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- ULIS 2009
Conference paperImpact of variability on the performance of SOI Schottky barrier MOSFETs
- S.F. Feste
- M. Zhang
- et al.
- 2009
- Solid-State Electronics
PaperDonor deactivation in silicon nanostructures
- Mikael T. Björk
- Heinz Schmid
- et al.
- 2009
- Nature Nanotechnology
PaperDoping limits of grown in situ doped silicon nanowires using phosphine
- Heinz Schmid
- Mikael T. Björk
- et al.
- 2009
- Nano Letters
PaperImproving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
- C. Sandow
- J. Knoch
- et al.
- 2008
- DRC 2008
Conference paperToward nanowire electronics
- Joerg Appenzeller
- Joachim Knoch
- et al.
- 2008
- IEEE T-ED
PaperFabrication of uniaxially strained silicon nanowires
- S.F. Feste
- J. Knoch
- et al.
- 2008
- Thin Solid Films
Paper