80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
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36 results for Q. Ouyang
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping
- Xiangdong Chen
- Qiqing Christine Ouyang
- et al.
- 2002
- IEEE Transactions on Electron Devices
Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors
- Xiangdong Chen
- Qiqing Ouyang
- et al.
- 2001
- Applied Physics Letters
A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
- Qiqing Ouyang
- Xiangdong Chen
- et al.
- 2000
- IEEE Transactions on Electron Devices
Enhanced secondary electron injection in novel SiGe flash memory devices
- D.L. Kencke
- X. Wang
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting