Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Paper
Enhanced secondary electron injection in novel SiGe flash memory devices
Abstract
2-D MonteCarlo (MC) simulations were used to explore the property of silicon germinium (SiGe) layers to control and enhance channel-initiated secondary electron (CHISEL) gate current. Novel SiGe flash memory cells showed a 4X enhancement in CHESEL gate current for both planar and vertical 0.18μtechnology.
Related
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B