J. Tersoff
Applied Surface Science
Paper
Enhanced secondary electron injection in novel SiGe flash memory devices
Abstract
2-D MonteCarlo (MC) simulations were used to explore the property of silicon germinium (SiGe) layers to control and enhance channel-initiated secondary electron (CHISEL) gate current. Novel SiGe flash memory cells showed a 4X enhancement in CHESEL gate current for both planar and vertical 0.18μtechnology.
Related
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999