Publications

45 results for M. Gribelyuk

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- - S. Narasimha
  - P. Chang
  - et al.
- 2012
- IEDM 2012
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- - U. Kwon
  - K. Wong
  - et al.
- 2012
- VLSI Technology 2012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- - S. Krishnan
  - U. Kwon
  - et al.
- 2011
- IEDM 2011
Mechanism of V_FB / V_TH shift in Dysprosium incorporated HfO₂ gate dielectric n-Type Metal-Oxide-Semiconductor devices
- - Tackhwi Lee
  - Kisik Choi
  - et al.
- 2011
- Journal of Vacuum Science and Technology B
Suppression of boron diffusion in deep submicron devices
- - Michael A. Gribelyuk
  - Phil Oldiges
  - et al.
- 2011
- Journal of Vacuum Science and Technology B
Electron holography for 2-D dopant profiling
- - Michael A. Gribelyuk
  - Jun Yuan
  - et al.
- 2009
- IWJT 2009
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- - K. Henson
  - H. Bu
  - et al.
- 2008
- IEDM 2008
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- - M. Chudzik
  - B. Doris
  - et al.
- 2007
- VLSI Technology 2007
Ni-Pt silicide formation through Ti mediating layers
- - Paul Besser
  - Christian Lavoie
  - et al.
- 2007
- Microelectronic Engineering
Process and electrical characteristics of MO-ALD HfO₂ films for high-K gate applications grown in a production-worthy 300 mm deposition system
- - R.D. Clark
  - C.S. Wajda
  - et al.
- 2007
- ECS Meeting 2007