Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing
- D.J. DiMaria
- Z.A. Weinberg
- et al.
- 2008
- Journal of Applied Physics
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27 results for John Aitken
Electron trapping in electron-beam irradiated SiO2
- J.M. Aitken
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
- F. Chen
- O. Bravo
- et al.
- 2006
- IRPS 2006
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
- A. Acovic
- C.C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Projected Life-Times of Circuits in Krypton 85 Contaminated Packages
- G.A. Sai-Halasz
- J.M. Aitken
- 1982
- IEEE Electron Device Letters
A hardened field insulator
- G.J. Hu
- J.M. Aitken
- et al.
- 1981
- IEEE TNS
Annealing of radiation-induced positive charge in MOS devices with aluminum and polysilicon gate contacts
- J.M. Aitken
- 1980
- Journal of Electronic Materials