Publications

27 results for John Aitken

On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure
- - A. Reisman
  - J.M. Aitken
  - et al.
- 2019
- JES
Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- - Fen Chen
  - Michael Shinosky
  - et al.
- 2013
- IRPS 2013
Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- - Fen Chen
  - Michael Shinosky
  - et al.
- 2012
- Applied Physics Letters
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- - Fen Chen
  - Jeffrey Gambino
  - et al.
- 2012
- IRPS 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- - F. Chen
  - Michael Shinosky
  - et al.
- 2011
- IRPS 2011
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
- - D.P. Ioannou
  - K. Zhao
  - et al.
- 2011
- IRPS 2011
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- - F. Chen
  - M. Shinosky
  - et al.
- 2009
- IRPS 2009
Electron trapping by radiation-induced charge in MOS devices
- - J.M. Aitken
  - D.R. Young
- 2008
- Journal of Applied Physics
Capture of electrons into Na⁺-related trapping sites in the SiO₂ layer of MOS structures at 77 °K
- - D.J. DiMaria
  - J.M. Aitken
  - et al.
- 2008
- Journal of Applied Physics
Current and C-V instabilities in SiO₂ at high fields
- - P. Solomon
  - J.M. Aitken
- 2008
- Applied Physics Letters