Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
Publications
35 results for Shogo Mochizuki
Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability
- Zuoguang Liu
- Oleg Gluschenkov
- et al.
- 2017
- VLSI Technology 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- VLSI Technology 2017
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- ASICON 2017
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
- David Cooper
- N. Bernier
- et al.
- 2017
- Applied Physics Letters
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2017
- JVSTB
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016