Conference paperFINFET technology featuring high mobility SiGe channel for 10nm and beyondDechao Guo, G. Karve, et al.VLSI Technology 2016
Conference paperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channelsRuilong Xie, Pietro Montanini, et al.IEDM 2016
Conference paperParasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nmHeng Wu, Oleg Gluschenkov, et al.IEDM 2018
Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETsN. Breil, B.-C. Lee, et al.VLSI Technology 2023
