Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETsN. Breil, B.-C. Lee, et al.VLSI Technology 2023
Conference paperFinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloysOleg Gluschenkov, Zuoguang Liu, et al.IEDM 2016
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETsChoonghyun Lee, Shogo Mochizuki, et al.IEDM 2017
Conference paperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channelsRuilong Xie, Pietro Montanini, et al.IEDM 2016
