Huimei Zhou, Miaomiao Wang, et al.
IRPS 2020
Paper
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
Abstract
The effect of cluster carbon implantation and recrystallization on properties of phosphorus doped Si (Si
Related
Choonghyun Lee, H. Kim, et al.
VLSI Technology 2016
Choonghyun Lee, Richard G. Southwick, et al.
IEDM 2018
Hiroaki Niimi, Zuoguang Liu, et al.
IEEE Electron Device Letters