CMOS mixed-signal circuit process variation sensitivity characterization for yield improvement
- Daeik Kim
- Ongyeun Cho
- et al.
- 2006
- CICC 2006
Publications
90 results for Jean-Olivier Plouchart
Low phase noise 5 GHz VCOs in 0.13 μm SOI and bulk CMOS
- David I. Sanderson
- Jonghae Kim
- et al.
- 2006
- ICSICT 2006
Double-gate FET technology for RF applications: Device characteristics and low noise amplifier design
- Karan Bhatia
- Keunwoo Kim
- et al.
- 2006
- IEEE SOI 2006
Modeling of variation in submicrometer CMOS ULSI technologies
- Scott K. Springer
- Sungjae Lee
- et al.
- 2006
- IEEE Transactions on Electron Devices
SOI 90-nm ring oscillator sub-ps model-hardware correlation and parasitic-aware optimization leading to 1.94-ps switching delay
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2005
- IEDM 2005
Scalability of SOI CMOS technology and circuit to millimeter wave performance
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2005
- CSICS 2005
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2005
- IEEE Transactions on Electron Devices
Design and manufacturability aspect of SOI CMOS RFICs
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2004
- CICC 2004
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits