Scott K. Springer, Sungjae Lee, et al.
IEEE Transactions on Electron Devices
This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-μm SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the fivestage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.
Scott K. Springer, Sungjae Lee, et al.
IEEE Transactions on Electron Devices
Daeik Kim, Jonghae Kim, et al.
IEEE Electron Device Letters
Mehmet Soyuer, Herschel A. Ainspan, et al.
Proceedings of the IEEE
Daeik D. Kim, Ongyeun Cho, et al.
CSICS 2008