Publications

24 results for J. DeBrosse

A 14 nm embedded STT-MRAM CMOS technology
- - Daniel C. Edelstein
  - M. Rizzolo
  - et al.
- 2020
- IEDM 2020
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
- - J. DeBrosse
  - T. Maffitt
  - et al.
- 2015
- CICC 2015
Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory
- - Jonathan Z. Sun
  - John Debrosse
  - et al.
- 2013
- Journal of Applied Physics
A study of write margin of spin torque transfer magnetic random access memory technology
- - Tai Min
  - Qiang Chen
  - et al.
- 2010
- IEEE Transactions on Magnetics
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- - R. Beach
  - T. Min
  - et al.
- 2008
- IEDM 2008
Design considerations for MRAM
- - Thomas M. Maffitt
  - John K. DeBrosse
  - et al.
- 2006
- IBM J. Res. Dev
Recent advances in MRAM technology
- - W.J. Gallagher
  - D.W. Abraham
  - et al.
- 2005
- VLSI Technology 2005
A 16-Mb MR AM featuring bootstrapped write drivers
- - Dietmar Gogl
  - Christian Arndt
  - et al.
- 2005
- IEEE Journal of Solid-State Circuits
A 16Mb MRAM featuring bootstrapped write drivers
- - J.K. DeBrosse
  - C. Arndt
  - et al.
- 2004
- VLSI Circuits 2004
A High-Speed 128-kb MRAM Core for Future Universal Memory Applications
- - John DeBrosse
  - Dietmar Gogl
  - et al.
- 2004
- IEEE Journal of Solid-State Circuits