Novel lithography-independent pore phase change memory
- M. Breitwisch
- T. Nirschl
- et al.
- 2007
- VLSI Technology 2007
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41 results for Philip L. Flaitz
Implementation of robust nickel alloy salicide process for high-performance 65nm SOI CMOS manufacturing
- Jay Strane
- David Brown
- et al.
- 2007
- VLSI-TSA 2007
Impact of Cu microstructure on electromigration reliability
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- IITC 2007
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- Matthew Angyal
- Jason Gill
- et al.
- 2005
- AMC 2005
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004