Straddle gate transistors: High Ion/Ioff transistors at short gate lengths
- S. Tiwari
- J.J. Welser
- et al.
- 1999
- DRC 1999
Paper
Publications
70 results for Sandip Tiwari
CMOS and memories: From 100 nm to 10 nm!
- Sandip Tiwari
- Paul M. Solomon
- et al.
- 1999
- Microelectronic Engineering
PaperCurrents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- DRC 1998
Conference paperBonding of thin films on 200 mm silicon wafers using chemical mechanical polishing
- E.C. Jones
- S. Tiwari
- et al.
- 1998
- IEEE International SOI Conference 1998
Conference paperStraddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- IEDM 1998
Conference paperKinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors
- Farhan Rana
- Sandip Tiwari
- et al.
- 1998
- Superlattices and Microstructures
PaperHole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain
- S. Tiwari
- M.V. Fischetti
- et al.
- 1997
- IEDM 1997
Conference paperTechnology and power-speed trade-offs in quantum-dot and nano-crystal memory devices
- S. Tiwari
- J.J. Welser
- et al.
- 1997
- VLSI Technology 1997
Conference paperRoom temperature operation of a quantum-dot flash memory
- J.J. Welser
- Sandip Tiwari
- et al.
- 1997
- IEEE Electron Device Letters
PaperFast and long retention-time nano-crystal memory
- Hussein I. Hanafi
- Sandip Tiwari
- et al.
- 1996
- IEEE Transactions on Electron Devices
Paper