Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors

Transport of electrons in semiconductor nano-structures exhibits many features that are a consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a metal-oxide-semiconductor transistor's channel region is one example of such a structure with utility as a dense semiconductor memory. The memory state of this unit cell is a function of the number of electrons stored in the quantum dot and is sensed by the conduction in the channel. We describe a kinetic approach, based on a master equation, for modelling the injection and ejection of electrons into and from the quantum dot, and compare numerical results with experimental results for the silicon/silicon dioxide system where such memory structures have been achieved. © 1998 Academic Press Limited.