Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
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182 results for Eduard Cartier
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
- C. Choi
- E. Cartier
- et al.
- 2007
- Microelectronic Engineering
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering
Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
- R.P. Pezzi
- M. Copel
- et al.
- 2006
- Applied Physics Letters
Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
- Daeyoung Lim
- Richard Haight
- et al.
- 2005
- Applied Physics Letters
Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
- R. Ludeke
- V. Narayanan
- et al.
- 2005
- Applied Physics Letters
Threshold voltage instabilities in high-κ gate dielectric stacks
- Sufi Zafar
- Arvind Kumar
- et al.
- 2005
- IEEE T-DMR
Transport and exchange of hydrogen isotopes in silicon-device-related stacks
- C. Krug
- E. Gusev
- et al.
- 2004
- Journal of Applied Physics
Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks with TiN electrodes
- A. Kerber
- E. Cartier
- et al.
- 2003
- Journal of Applied Physics
Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes
- Andreas Kerber
- Eduard Cartier
- et al.
- 2003
- IEEE Transactions on Electron Devices