E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
Paper
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Abstract
High-effective mobilities are demonstrated in Al2O3 based n-channel MOSFETs with Al gates. The Al2O3 was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm2/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.
Related
Conference paper
Gallium nitride based LEDs on silicon substrates
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
S. Guha, E. Cartier, et al.
Journal of Applied Physics