Transistor scaling with novel materials
- Meikei Ieong
- Vijay Narayanan
- et al.
- 2006
- Materials Today
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46 results for Zhibin Ren
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
- D. Singh
- Keith A. Jenkins
- et al.
- 2006
- IEEE Electron Device Letters
Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
- D. Singh
- J. Sleight
- et al.
- 2005
- IEDM 2005
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Scaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
- D. Singh
- P. Solomon
- et al.
- 2004
- IEDM 2004