J.C. Marinace
JES
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
J.C. Marinace
JES
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures