A. Gangulee, F.M. D'Heurle
Thin Solid Films
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials