Publications

11 results for Daniel Jaeger

Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
- - Vishal A. Tiwari
  - Young Way Teh
  - et al.
- 2015
- IEEE Electron Device Letters
0.026μm² high performance Embedded DRAM in 22nm technology for server and SOC applications
- - C. Pei
  - G. Wang
  - et al.
- 2014
- IEDM 2014
2^nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
- - C. Ortolland
  - Daniel Jaeger
  - et al.
- 2013
- IEDM 2013
Single wafer cleaning lessons in advanced node gate module development
- - David F. Hilscher
  - Daniel Jaeger
  - et al.
- 2013
- ASMC 2013
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- - S. Narasimha
  - P. Chang
  - et al.
- 2012
- IEDM 2012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- - S. Krishnan
  - U. Kwon
  - et al.
- 2011
- IEDM 2011
New layout dependency in high-k/metal gate MOSFETs
- - M. Hamaguchi
  - Deleep R. Nair
  - et al.
- 2011
- IEDM 2011
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- - Jin-Ping Han
  - Takashi Shimizu
  - et al.
- 2011
- Japanese Journal of Applied Physics
Stress liner proximity technique to enhance carrier mobility in high-κ metal gate MOSFETs
- - Dechao Guo
  - Kathryn Schonenberg
  - et al.
- 2009
- MRS Fall Meeting 2009
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- - D.-G. Park
  - K. Stein
  - et al.
- 2009
- VLSI-TSA 2009