CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Publications
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51 results for Alexander Reznicek
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Strain loss in epitaxial Si: C films induced by phosphorus diffusion
- B.F. Yang
- J.P. De. Souzab
- et al.
- 2008
- ECS Meeting 2008
Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Advanced applications of semiconductor epitaxy for cutting edge integrated circuit technology
- D.K. Sadana
- M. Yang
- et al.
- 2006
- ECS Meeting 2006
Substrate engineering for germanium-based CMOS technology
- S.W. Bedell
- K.E. Fogel
- et al.
- 2006
- ECS Meeting 2006