Publications

11 results for Teresa Pinto

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- - Shogo Mochizuki
  - Conal E. Murray
  - et al.
- 2017
- Journal of Applied Physics
Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction
- - Judson R. Holt
  - Anita Madan
  - et al.
- 2013
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- - F. Ito
  - H. Shobha
  - et al.
- 2012
- Microelectronic Engineering
SIMS quantification of SiGe composition with low-energy ion beams
- - Zhengmao Zhu
  - Paul Ronsheim
  - et al.
- 2011
- Surface and Interface Analysis
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- - F. Ito
  - H. Shobha
  - et al.
- 2010
- ADMETA 2010
Crystallization characteristics of Ge-Sb phase change materials
- - Simone Raoux
  - Cyril Cabrai Jr.
  - et al.
- 2009
- MRS Spring Meeting 2009
Phase transitions in Ge-Sb phase change materials
- - Simone Raoux
  - Cyril Cabral
  - et al.
- 2009
- Journal of Applied Physics
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- - A. Madan
  - J. Li
  - et al.
- 2008
- ECS Meeting 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- - Zhibin Ren
  - G. Pei
  - et al.
- 2008
- VLSI Technology 2008
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge
- - C. Cabral
  - L. Krusin-Elbaum
  - et al.
- 2008
- Applied Physics Letters