Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paper
Publications
20 results for S. Lombardo
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
PaperBreakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
PaperGrowth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperVoltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
PaperThe impact of gate-oxide breakdown SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- IEEE Electron Device Letters
PaperOn the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
- F. Crupi
- C. Ciofi
- et al.
- 2002
- Applied Physics Letters
PaperDependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Conference paperAnalysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Conference paperSoftening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density
- S. Lombardo
- F. Crupi
- et al.
- 2001
- Annual Proceedings - Reliability Physics (Symposium)
Paper