R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters
Paper
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
Abstract
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.
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