A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
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123 results for Tak H. Ning
Silicon VLSI technology--Today and tomorrow
- T.H. Ning
- 1991
- GaAs IC 1991
Technology trends in sub-0.5 μm bipolar
- T.H. Ning
- 1990
- SSDM 1990
Design and technology challenges for sub-0.5 μm CMOS and bipolar
- T.H. Ning
- 1989
- VLSI-TSA 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IRPS 1989
History, present trends, and scaling of silicon bipolar technology
- Tak H. Ning
- 1987
- ESSDERC 1987
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.
- T.H. Ning
- 1983
- VLSI Science and Technology 1983
EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.
- T.H. Ning
- 1983
- ECS Meeting 1983