Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1989
- IEEE Electron Device Letters
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123 results for Tak H. Ning
Effect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar Transistors
- Ching-Te Chuang
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
1, μm MOSFET VLSI Technology: Part IV-Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE JSSC
First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions
- Pouya Hashemi
- Jeng-Bang Yau
- et al.
- 2017
- S3S 2017
Semiconductor-On-Insulator lateral bipolar transistors for high-speed low-power applications
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2017
- VLSI-TSA 2017
Ge-on-insulator lateral bipolar transistors
- Jeng-Bang Yau
- Joonah Yoon
- et al.
- 2016
- BCTM 2016
Bipolar junction transistor based sensors for chemical and biological sensing
- Sufi Zafar
- Tak H. Ning
- 2016
- ESSDERC 2016
SiGe-on-insulator symmetric lateral bipolar transistors
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2015
- S3S 2015
SOI lateral bipolar transistor with drive current >3mA/μm
- J. Cai
- Tak H. Ning
- et al.
- 2013
- S3S 2013