Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
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123 results for Tak H. Ning
Optically induced injection of hot electrons into SiO2
- T.H. Ning
- H.N. Yu
- 2003
- Journal of Applied Physics
Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2003
- Journal of Applied Physics
Polysilicon-emitter SiGe-base bipolar transistors - What happens when Ge gets into the emitter?
- Tak H. Ning
- 2003
- IEEE Transactions on Electron Devices
Why BiCMOS and SOI BiCMOS?
- Tak H. Ning
- 2002
- IBM J. Res. Dev
History and future perspective of the modern silicon bipolar transistor
- T.H. Ning
- 2001
- IEEE Transactions on Electron Devices
FEOL technology trend
- Yuan Taur
- Tak H. Ning
- 1998
- Materials Chemistry and Physics
Trends in CMOS technology and application development
- Tak H. Ning
- 1997
- Materials Chemistry and Physics
CMOS scaling in the 0.1-μm, 1.X-volt regime for high-performance applications
- G. Shahidi
- J. Warnock
- et al.
- 1995
- IBM J. Res. Dev
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices