Conference paper
A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
This paper describes advanced charge-buffered-logic (CBL) circuits featuring double-poly self-alignment, a “free” epi-base lateral p-n-p (cutoff frequency = 300 MHz only), and deep trench isolation. Using 1.2-μm design rules and a modified push-pull output stage, a gate delay (fan-in = 3) of 278 ps was obtained at a dc current of 30 μA/gate. © 1989 IEEE
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
S.K. Wiedmann, D.F. Wendel
VLSI Technology 1985
Hackbarth LI, Edward, Tze Chiang Chen
IEEE T-ED