Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
- T. Suski
- J. Jun
- et al.
- 1998
- Journal of Applied Physics
Paper
Publications
11 results for S. Strite
Direct SIMS determination of the InxGa1-xN mole fraction
- A.P. Kovarsky
- Yu.L. Kretser
- et al.
- 1998
- MRS Internet Journal of Nitride Semiconductor Research
PaperEfficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
PaperImproved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
PaperProperties of InGaN deposited on glass at low temperature
- Tilman Beierlein
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
PaperProperties of Zn implanted GaN
- S. Strite
- P.W. Epperlein
- et al.
- 1995
- MRS Fall Meeting 1995
Conference paperValence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy
- G. Martin
- S. Strite
- et al.
- 1995
- Journal of Electronic Materials
PaperResonant cavity enhanced photonic devices
- M. Selim Ünlü
- Samuel Strite
- 1995
- Journal of Applied Physics
PaperRole of molecular beam epitaxy in the field of optoelectronics
- Heinz P. Meier
- M. Kamp
- et al.
- 1994
- Microelectronics Journal
PaperGan core relaxation effects and their ramifications for P-type doping
- S. Strite
- 1994
- Japanese Journal of Applied Physics
Paper