The DX centre
T.N. Morgan
Semiconductor Science and Technology
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15%.
T.N. Morgan
Semiconductor Science and Technology
Peter J. Price
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films