Publications

21 results for M. Lofaro

High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- - S. Lee
  - Cheng-Wei Cheng
  - et al.
- 2018
- IEDM 2018
Integrated nanoscale deterministic lateral displacement arrays for separation of extracellular vesicles from clinically-relevant volumes of biological samples
- - Joshua T. Smith
  - Benjamin Wunsch
  - et al.
- 2018
- Lab on a Chip
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- - Xiao Sun
  - Christopher P. D’Emic
  - et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- VLSI Technology 2017
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm²
- - Adam Pyzyna
  - Hsinyu Tsai
  - et al.
- 2017
- IITC 2017
Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules
- - Chao Wang
  - Sung Wook Nam
  - et al.
- 2017
- Nature Communications
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
Critical BEOL aspects of the fabrication of a thermally-assisted MRAM device
- - E.J. O'sullivan
  - Daniel C. Edelstein
  - et al.
- 2015
- ECS Meeting 2015 Phoenix
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- - V. Djara
  - Veeresh Deshpande
  - et al.
- 2015
- VLSI Technology 2015
Resistivity of copper interconnects beyond the 7 nm node
- - Adam Pyzyna
  - Robert L. Bruce
  - et al.
- 2015
- VLSI Technology 2015