A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
Conference paper
Publications
8 results for Robert M. Rassel
Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications
- Ullrich R. Pfeiffer
- Chinmaya Mishra
- et al.
- 2008
- IEEE T-MTT
PaperSilicon Schottky diode power converters beyond 100 GHz
- C. Mishra
- U. Pfeiffer
- et al.
- 2007
- RFIC 2007
Conference paperP-i-n diodes for monolithic millimetre wave BiCMOS applications
- Bradley A. Orner
- Qizhi Liu
- et al.
- 2006
- Semiconductor Science and Technology
PaperSiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
Conference paperA BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
Conference paperP-i-n diodes for monolithic millimeter wave BiCMOS applications
- Bradley A. Orner
- Qizhi Liu
- et al.
- 2006
- ISTDM 2006
Conference paperSiGe HBT BiCMOS technology for millimeter-wave applications
- Alvin Joseph
- Mattias Dahlstrom
- et al.
- 2005
- ISCS 2005
Conference paper