Publications

8 results for Robert M. Rassel

A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f _T/f_MAX of 15/14 GHz VPNP, and f_T/f _MAX of 60/125 GHz HBT
- - P. Candra
  - M. Dahlström
  - et al.
- 2008
- BCTM 2008
Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications
- - Ullrich R. Pfeiffer
  - Chinmaya Mishra
  - et al.
- 2008
- IEEE T-MTT
Silicon Schottky diode power converters beyond 100 GHz
- - C. Mishra
  - U. Pfeiffer
  - et al.
- 2007
- RFIC 2007
P-i-n diodes for monolithic millimetre wave BiCMOS applications
- - Bradley A. Orner
  - Qizhi Liu
  - et al.
- 2006
- Semiconductor Science and Technology
A BiCMOS technology featuring a 300/330 GHz (f_T/f_max) SiGe HBT for millimeter wave applications
- - B. Orner
  - M. Dahlström
  - et al.
- 2006
- BCTM 2006
SiGe BiCMOS trends - today and tomorrow
- - J. Dunn
  - D.L. Harame
  - et al.
- 2006
- CICC 2006
P-i-n diodes for monolithic millimeter wave BiCMOS applications
- - Bradley A. Orner
  - Qizhi Liu
  - et al.
- 2006
- ISTDM 2006
SiGe HBT BiCMOS technology for millimeter-wave applications
- - Alvin Joseph
  - Mattias Dahlstrom
  - et al.
- 2005
- ISCS 2005