Conference paper
New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
High performance communications applications have made technology choices more important than ever. Silicon Germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions. © 2006 IEEE.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
S. Voldman, P. Juliano, et al.
EOS/ESD 2000
M. Soyuer, J.N. Burghartz, et al.
BCTM 1996
K. Schonenberg, Siu-Wai Chan, et al.
Journal of Materials Research