A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications

B. Orner; M. Dahlström; A. Pothiawala; R.M. Rassel; Q. Liu; H. Ding; M. Khater; D. Ahlgren; A. Joseph; J. Dunn

doi:10.1109/BIPOL.2006.311157

BCTM 2006

Conference paper

01 Dec 2006

A BiCMOS technology featuring a 300/330 GHz (f_T/f_max) SiGe HBT for millimeter wave applications

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Abstract

We present a 0.13 μm SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives. © 2006 IEEE.

Conference paper