Breakdown measurements of ultra-thin SiO2 at low voltageJ.H. StathisA. Vayshenkeret al.2000VLSI Technology 2000
Modular 0.13 μm bulk CMOS technology for high performance and low power applicationsL.K. HanS. Biesemanset al.2000VLSI Technology 2000
Ultra-thin oxide reliability for ULSI applicationsErnest Y. WuJames H. Stathiset al.2000Semiconductor Science and Technology
Challenges for accurate reliability projections in the ultra-thin oxide regimeE. WuW.W. Abadeeret al.1999IRPS 1999
High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delayM. HargroveS.W. Crowderet al.1998IEDM 1998
Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substratesL.K. HanS.W. Crowderet al.1997IEDM 1997
Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)S.H. LoD.A. Buchananet al.1997VLSI Technology 1997