M. Hargrove, S.W. Crowder, et al.
IEDM 1998
In this work, we discuss several important aspects of reliability projections, especially for ultra-thin oxides in direct tunneling regime such as stress methodologies, the determination of projection parameters, and their dependence on stress conditions as well as their impact on reliability projection. Most importantly, we found the Weibull shape factors and area dependence are key to understand the reliability limitations for ultra-thin oxides.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
Mukesh Khare, S. Ku, et al.
IEDM 2002
F. Cartier, D.J. DiMaria, et al.
DRC 1994