Electrical activation in silicon-on-insulator after low energy boron implantation
- Antonio F. Saavedra
- Kevin S. Jones
- et al.
- 2004
- Journal of Applied Physics
Paper
Publications
21 results for E.C. Jones
Secondary defect formation in bonded silicon-on-insulator after boron implantation
- A.F. Saavedra
- A.C. King
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperRecent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Conference paperElectrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
PaperTwo gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
PaperHigh-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- Journal of Applied Physics
PaperSub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Conference paperHigh mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Conference paperExtreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Conference paperExamination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Conference paper