Publications

21 results for E.C. Jones

Electrical activation in silicon-on-insulator after low energy boron implantation
- - Antonio F. Saavedra
  - Kevin S. Jones
  - et al.
- 2004
- Journal of Applied Physics
Secondary defect formation in bonded silicon-on-insulator after boron implantation
- - A.F. Saavedra
  - A.C. King
  - et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Recent progress in devices and materials for CMOS technology
- - H.-S. Philip Wong
  - B. Doris
  - et al.
- 2003
- VLSI-TSA 2003
Electrical characterization of germanium p-channel MOSFETs
- - H. Shang
  - H. Okorn-Schimdt
  - et al.
- 2003
- IEEE Electron Device Letters
Two gates are better than one
- - P. Solomon
  - K.W. Guarini
  - et al.
- 2003
- IEEE Circuits and Devices Magazine
High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- - G.M. Cohen
  - P.M. Mooney
  - et al.
- 2002
- Journal of Applied Physics
Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS device
- - K.L. Lee
  - J.O. Chu
  - et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- - Zhibin Ren
  - Paul M. Solomon
  - et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- - Huiling Shang
  - Harald Okorn-Schmidt
  - et al.
- 2002
- IEDM 2002
Extreme scaling with ultra-thin Si channel MOSFETs
- - Bruce Doris
  - Meikei Ieong
  - et al.
- 2002
- IEDM 2002