On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Publications
18 results for Jae-Sung Rieh
Manufacturable parasitic-aware circuit-level FETs in 65-nm SOI CMOS technology
- Daeik Kim
- Jonghae Kim
- et al.
- 2007
- IEEE Electron Device Letters
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
- J.-S. Rieh
- M. Khater
- et al.
- 2006
- Electronics Letters
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices
Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances
- Jae-Sung Rieh
- David Greenberg
- et al.
- 2005
- IEEE Transactions on Electron Devices
Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
Scaling of SiGe heterojunction bipolar transistors
- Jae-Sung Rieh
- Andreas Stricker
- et al.
- 2005
- Proceedings of the IEEE
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004