H. Kawasaki, V.S. Basker, et al.
IEDM 2009
Paper
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
Abstract
The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect. © The Institution of Engineering and Technology 2006.
Related
B. Jagannathan, M. Khater, et al.
IEEE Electron Device Letters
Conference paper
FinFET performance advantage at 22nm: An AC perspective
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
Conference paper
SiGe BiCMOS trends - today and tomorrow
J. Dunn, D.L. Harame, et al.
CICC 2006