Publications

59 results for R. Germann

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- - C. Marchiori
  - D.J. Webb
  - et al.
- 2009
- Journal of Applied Physics
High mobility III-V channel MOSFETs for post-Si CMOS applications
- - Yanning Sun
  - E.W. Kiewra
  - et al.
- 2009
- ICICDT 2009
CMOS scaling beyond 22 nm node
- - D.K. Sadana
  - S.W. Bedell
  - et al.
- 2009
- ECS Meeting 2009
Ge p-channel MOSFETS with La₂O₃ and A1 ₂O₃ Gate dielectrics
- - C. Rossel
  - A. Dimoulas
  - et al.
- 2008
- ESSDERC 2008
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- - J.P. De Souza
  - E.W. Kiewra
  - et al.
- 2008
- Applied Physics Letters
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- - Yanning Sun
  - S.J. Koester
  - et al.
- 2007
- CS MANTECH 2007
Optical properties of epitaxial SrHf O3 thin films grown on Si
- - M. Sousa
  - C. Rossel
  - et al.
- 2007
- Journal of Applied Physics
In-situ MBE Si as passivating interlayer on GaAs for HfO₂ MOSCAP's: effect of GaAs surface reconstruction
- - D.J. Webb
  - J. Fompeyrine
  - et al.
- 2007
- Microelectronic Engineering
SrHfO₃ as gate dielectric for future CMOS technology
- - C. Rossel
  - M. Sousa
  - et al.
- 2007
- Microelectronic Engineering
Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics
- - Yanning Sun
  - E.W. Kiewra
  - et al.
- 2007
- IEEE Electron Device Letters