Site selectivity in the reaction of Si(111)-(7×7) with Si2H6
- Ph. Avouris
- F. Bozso
- 2002
- Journal of Physical Chemistry
Paper
Publications
17 results for F. Bozso
Effect of atomic oxygen on the initial growth mode in thin epitaxial cuprate films
- T. Frey
- C.C. Chi
- et al.
- 1994
- Physical Review B
PaperInitial stage oxidation of the Ge:Si(111)-(5×5) and Ge:Si(111)-(7X7) surfaces
- R. Cao
- F. Bozso
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperAdsorption of phosphorus on Si(111): Structure and chemical reactivity
- F. Bozso
- Ph. Avouris
- 1991
- Physical Review B
PaperThermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanism
- F. Bozso
- Ph. Avouris
- 1991
- Physical Review B
PaperAdsorption of boron on Si(111): Physics, chemistry, and atomic-scale electronic devices
- Ph. Avouris
- In-Whan Lyo
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperPhotoemission studies of the reactions of ammonia and N atoms with Si(100)-(2×1) and Si(111)-(7×7) surfaces
- F. Bozso
- Ph. Avouris
- 1988
- Physical Review B
PaperThermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)
- F. Bozso
- Ph. Avouris
- 1988
- Physical Review B
PaperElectron-induced chemical vapor deposition by reactions induced in adsorbed molecular layers
- F. Bozso
- Ph. Avouris
- 1988
- Applied Physics Letters
PaperA scanning tunneling microscopy study of the reaction of si(001)-(2 x 1) with nh3
- R.J. Hamers
- Ph. Avouris
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper