Electron-induced chemical vapor deposition by reactions induced in adsorbed molecular layers

We demonstrate the feasibility of electron-induced chemical vapor deposition of thin films using low-energy electrons to induce reactions in adsorbed molecular layers. Amorphous hydrogenated silicon, silicon dioxide, silicon oxynitride, and silicon nitride films have been deposited by establishing adsorbed Si2H6, Si2H 6-O2, Si2H6-NO, and Si 2H6-NH3 layers at 100 K and using 300-1000 eV electron beams.