Publications

32 results for M. Arienzo

In Situ Arsenic-Doped Polysilicon for VLSI Applications
- - Maurizio Arienzo
  - Andrew C. Megdanis
  - et al.
- 1986
- IEEE T-ED
POLYSILICON EMITTER RESISTANCE AND CARRIER TRANSPORT STUDIES.
- - J.M.C. Stork
  - C.Y. Wong
  - et al.
- 1984
- VLSI Technology 1984
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- - C.T. Chuang
  - G.P. Li
  - et al.
- 1985
- IEEE T-ED
Heavily Doped Polysilicon-Contact Solar Cells
- - F.A. Lindholm
  - A. Neugroschel
  - et al.
- 1985
- IEEE Electron Device Letters
Correlation Between the Diffusive and Electrical Barrier Properties of the Interface in Polysilicon Contacted n⁺-p Junctions
- - Johannes M.C. Stork
  - Maurizio Arienzo
  - et al.
- 1985
- IEEE T-ED
Experimental Study of the Minority-Carrier Transport at the Polysilicon—Monosilicon Interface
- - Arnost Neugroschel
  - Maurizio Arienzo
  - et al.
- 1985
- IEEE T-ED
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- - C.T. Chuang
  - G.P. Li
  - et al.
- 1984
- ECS Meeting 1984
LPCVD IN-SITU ARSENIC DOPED POLYSILICON FOR VLSI APPLICATIONS.
- - M. Arienzo
  - A.C. Megdanis
  - et al.
- 1984
- IEDM 1984
Diffusion of arsenic in bilayer polycrystalline silicon films
- - M. Arienzo
  - Y. Komem
  - et al.
- 1984
- Journal of Applied Physics
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- - B.J. Ginsberg
  - M. Arienzo
  - et al.
- 1983
- ECS Meeting 1983