Pressure-dependent measurements on n+ GaAs (Si, Sn): The effect of deep donor (DX) states on the electrical properties and persistent photoconductivity
- T. Foster
- D.K. Maude
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- 2006
- Physica Scripta
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Publications
71 results for Mordehai Heiblum
Construction of a dynamic load line
- Mordehai Heiblum
- 2002
- Physics Education
PaperCapacitively-coupled measurements on the frequency dependent diagonal magnetoconductance of a 2DEG in GaAs heterostructure in the quantum Hall regime
- J.I. Lee
- P.J. Stiles
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- 1992
- Surface Science
PaperTheoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K.R. Lee
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- 1990
- Journal of Applied Physics
PaperEffect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers
- B. Laikhtman
- M. Heiblum
- et al.
- 1990
- Applied Physics Letters
PaperLong mean free path of hot electrons selectively injected to higher subbands
- B. Laikhtman
- U. Sivan
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- 1990
- Physical Review Letters
PaperElectrostatic electron lens in the ballistic regime
- U. Sivan
- M. Heiblum
- et al.
- 1990
- Physical Review B
PaperHot electron transport in the plane
- M. Heiblum
- A. Palevski
- et al.
- 1990
- Surface Science
PaperExcess current in n+GaAsAlxGa1-xAsnGaAs heterojunctions
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Surface Science
PaperHot electron transport in two dimensional electron gas
- U. Sivan
- A. Palevski
- et al.
- 1990
- Solid State Electronics
Paper