Theory of core exciton binding energies for excitons near interfaces
- Roland E. Allen
- Harold P. Hjalmarson
- et al.
- 2009
- International Journal of Quantum Chemistry
Publications
47 results for D.J. Wolford
Transfer of excitons bound to nitrogen in GaAs1-xPx:N
- J.H. Collet
- J.A. Kash
- et al.
- 2000
- Journal of Physics C: Solid State Physics
Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al xGa1-xAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1994
- Applied Physics Letters
Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1994
- Physical Review B
Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures
- H.P. Hjalmarson
- G.D. Gilliland
- et al.
- 1994
- Journal of Luminescence
Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1993
- Journal of Applied Physics
Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices
- G.D. Gilliland
- A. Antonelli
- et al.
- 1993
- Physical Review Letters
Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1993
- Physical Review B
Luminescence from Si/Si1-xGex heterostructures and superlattices
- G. Northrop
- D.J. Wolford
- et al.
- 1992
- Applied Physics Letters
Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure
- G. Northrop
- J.F. Morar
- et al.
- 1992
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures