Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Paper
Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure
Abstract
Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.
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