Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

G. Northrop; J.F. Morar; D.J. Wolford; J.A. Bradley

doi:10.1116/1.586178

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

01 Jul 1992

Photoluminescence from pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

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Abstract

Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.

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Physica A: Statistical Mechanics and its Applications

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MRS Proceedings 1983

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IEEE T-MTT

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Micro and Nano Engineering

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Abstract

Related

Vortex dynamics in YBaCuO single crystals with point- and line-like defects-flux creep studies

NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Michael Hatzakis, semiconductor industry pioneer