Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Publications
17 results for Mark S. Lundstrom
Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
- Seung Hyun Park
- Yang Liu
- et al.
- 2012
- IEEE T-ED
On the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Mathieu Luisier
- et al.
- 2012
- Nano Letters
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
Substrate gating of contact resistance in graphene transistors
- Dionisis Berdebes
- Tony Low
- et al.
- 2011
- IEEE T-ED
Temperature dependence of the transconductance in ballistic III-V QWFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2011
- IEEE T-ED
Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
- Siyuranga O. Koswatta
- Mark S. Lundstrom
- et al.
- 2009
- IEEE Transactions on Electron Devices
Computational study of exciton generation in suspended carbon nanotube transistors
- Siyuranga O. Koswatta
- Vasili Perebeinos
- et al.
- 2008
- Nano Letters
Exciton generation in suspended carbon nanotube FETs: A computational study
- Siyuranga O. Koswatta
- Vasili Perebeinos
- et al.
- 2007
- IEDM 2007